savantic semiconductor product specification silicon pnp power transistors 2SA1307 d escription with to-220fa package complement to type 2sc3299 low saturation voltage high speed switching time applications high current switching applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -50 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a i b base current -1 a t c =25 20 p c collector power dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1307 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector- emitter breakdown voltage i c =-10ma , i b =0 -50 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.15a -0.4 v v besat base-emitter saturation voltage i c =-3a; i b =-0.15a -1.2 v i cbo collector cut-off current v cb =-50v;i e =0 -1.0 a i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 a h fe-1 dc current gain i c =-1a ; v ce =-1v 70 240 h fe-2 dc current gain i c =-3a ; v ce =-1v 30 c ob output capacitance i e =0; v cb =-10v,f=1mhz 170 pf f t transition frequency i c =-1a ; v ce =-4v 60 mhz switching times t on turn-on time 0.1 s t s storage time 1.0 s t f fall time i b1 =-i b2 =-0.15a,v cc =30v r l =10 a 0.1 s h fe-1 classifications o y 70-140 120-240
savantic semiconductor product specification 3 silicon pnp power transistors 2SA1307 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2SA1307
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